刘宇，男，博士，讲师。于湖南大学物理与微电子科学学院电子科学与技术专业获工学学士学位和博士学位。
主要研究基于新型半导体金属卤化物钙钛矿的场效应晶体管和热电器件的制备、调控与电荷传输研究。目前以第一作者发表期刊论文4篇，会议论文1篇，并申请中国专利1项。
主要研究成果：
（1） Liu Y, Hu Y. Doping of Sn-Based Two-Dimensional Perovskite Semiconductor for High-Performance Field-Effect Transistors [M]. 2022 IEEE International Flexible Electronics Technology Conference (IFETC). 2022: 1-2.
（2） Liu Y, Chen P-A, Qiu X, Guo J, Xia J, Wei H, Xie H, Hou S, He M, Wang X, Zeng Z, Jiang L, Liao L, Hu Y. Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI4 for field-effect transistors and thermoelectric devices [J]. STAR Protocols, 2022, 3(4): 101876.
（3） Liu Y, Chen P-A, Qiu X, Guo J, Xia J, Wei H, Xie H, Hou S, He M, Wang X, Zeng Z, Jiang L, Liao L, Hu Y. Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices [J]. iScience, 2022, 25(4): 104109.
（4） Liu Y, Chen P-A, Hu Y. Recent developments in fabrication and performance of metal halide perovskite field-effect transistors [J]. Journal of Materials Chemistry C, 2020, 8(47): 16691-16715.
（5） Liu Y, Wei H, Guo J, Chen P-A, Liu S, Li J, Miao L, Wang N, Chen Z, Wang J, Chen H, Hu Y. Understanding the enhancement of responsitivity in perovskite/organic semiconductor bilayer-structured photodetectors [J]. Organic Electronics, 2019, 75(10): 105372.
胡袁源，刘宇；一种顶接触锗基二维钙钛矿晶体管及其制备方法。（中国发明专利，申请号：CN202311459820.2）
